دیتاشیت NDS356AP-VB
مشخصات دیتاشیت
| نام دیتاشیت |
NDS356AP-VB
|
| حجم فایل |
73.833
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
9
|
مشخصات
-
RoHS:
true
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Type:
P Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
VBsemi Elec NDS356AP-VB
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Operating Temperature:
-55°C~+150°C@(Tj)
-
Power Dissipation (Pd):
2.5W
-
Total Gate Charge (Qg@Vgs):
11.4nC@4.5V
-
Drain Source Voltage (Vdss):
30V
-
Input Capacitance (Ciss@Vds):
1.295nF@15V
-
Continuous Drain Current (Id):
5.6A
-
Gate Threshold Voltage (Vgs(th)@Id):
2V@250uA
-
Reverse Transfer Capacitance (Crss@Vds):
130pF@15V
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
46mΩ@10V,4.4A
-
Package:
SOT-23-3
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Manufacturer:
VBsemi Elec
